A triple-level cell charge trap flash memory device with CVD-grown MoS2-Reference-Cited by-同舟云学术

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A triple-level cell charge trap flash memory device with CVD-grown MoS2

Published:2022-07 Issue: Volume:38 Page:105620
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Kim Minkyung,Park Eunpyo,Park Jongkil,Kim Jaewook,Jeong YeonJoo,Lee Suyoun,Kim Inho,Park Jong-Keuk,Park Sung-Yun,Kwak Joon Young

Funder

Institute for Information and Communications Technology Promotion

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference12 articles.

1. Electronics based on two-dimensional materials;Fiori;Nat Nanotechnol,2014

2. Channel length scaling of MoS2 MOSFETs;Liu;ACS Nano,2012

3. Thickness-independent energy dissipation in graphene electronics;Wei;ACS Appl Mater Interfaces,2020

4. Current saturation in zero-bandgap, top-gated graphene field-effect transistors;Meric;Nat Nanotechnol,2008

5. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity;Kang;Nature,2015

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IGZO charge trap flash device for reconfigurable logic functions;Applied Physics Letters;2024-03-18

2. Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine;Nano Letters;2023-10-11

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