Measurement and simulation of boron diffusion in strained Si1−xGex epitaxial layers with a linearly graded germanium profile-Reference-Cited by-同舟云学术

Measurement and simulation of boron diffusion in strained Si1−xGex epitaxial layers with a linearly graded germanium profile

Published:2001-11 Issue:11 Volume:45 Page:1879-1884
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rajendran K.,Schoenmaker W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Physics and application of GexSi1−x/Si strained layer heterostructure;People;IEEE J Quant Electron,1986

2. Simulation of boron diffusivity in strained Si1−xGex epitaxial layers;Rajendran;J Appl Phys,2001

3. Rajendran K, Schoenmaker W, Decouter S, Loo R, Caymax M, Vandervorst W. Measurement and simulation of boron diffusion in strained Si1−xGex epitaxial layers. IEEE Trans Electron Dev, in press

4. Control of an anomalous boron diffusion in the base of Si/SiGe/Si hetereojunction bipolar transistors using PtSi;Xu;Appl Phys Lett,1994

5. Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers;Kuo;Appl Phys Lett,1995

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Dynamics Study of Explosive Crystallization of SiGe and Boron-Doped SiGe Alloys;Industrial & Engineering Chemistry Research;2006-03-02

2. Modeling of clustering reaction and diffusion of boron in strained Si1−xGex epitaxial layers;Solid-State Electronics;2003-05

3. SiGe channel p-MOSFETs scaling-down;Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710)