Modeling of clustering reaction and diffusion of boron in strained Si1−xGex epitaxial layers-Reference-Cited by-同舟云学术

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Modeling of clustering reaction and diffusion of boron in strained Si1−xGex epitaxial layers

Published:2003-05 Issue:5 Volume:47 Page:835-839
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rajendran K.,Villaneuva D.,Moens P.,Schoenmaker W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Studies of boron diffusivity in strained Si1−xGex epitaxial layers

2. Diffusion of Sb in Strained and Relaxed Si and SiGe

3. Boron diffusion in strainedSi1−xGexepitaxial layers

4. Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

5. Rajendran K, Schoenmaker W. Proceedings of the International Conference on Simulation of Semiconductor Process and Devices (SISPAD’00), 2000. p. 200

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1. Industrial Application of TCAD for SiGe Development;Measurement and Modeling of Silicon Heterostructure Devices;2007-12-13

2. Industrial Application of TCAD for SiGe Development;Silicon Heterostructure Handbook;2005-11

3. Isovalent Impurities;Computational Microelectronics;2004

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