Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer-Reference-Cited by-同舟云学术

Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

Published:2003-06 Issue:6 Volume:47 Page:981-987
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Polyakov A.Y,Smirnov N.B,Govorkov A.V,Kim Jihyun,Ren F,Thaler G.T,Overberg M.E,Frazier R,Abernathy C.R,Pearton S.J,Lee C.-M,Chyi J.-I,Wilson R.G,Zavada J.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Ferromagnetic interactions in doped semiconductors and their nanostructures (invited)

3. Room temperature ferromagnetic properties of (Ga, Mn)N

4. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature

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