Structural and optical properties of vanadium ion-implanted GaN-Reference-Cited by-同舟云学术

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Structural and optical properties of vanadium ion-implanted GaN

Published:2017-09 Issue: Volume:406 Page:53-57
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Macková A.,Malinský P.,Jagerová A.,Sofer Z.,Klímová K.,Sedmidubský D.,Mikulics M.,Lorinčík J.,Veselá D.,Böttger R.,Akhmadaliev S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Recombination coefficients of GaN-based laser diodes

2. Electrical and optical activation studies of Si-implanted GaN

3. Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

4. Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN

5. Characteristics of semi-insulating, Fe-doped GaN substrates

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computational insights into optoelectronic and magnetic properties of V(III)-doped GaN;Journal of Solid State Chemistry;2021-12

2. Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07

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