Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma-Reference-Cited by-同舟云学术

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Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Published:2003-03 Issue:3 Volume:47 Page:559-563
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sanguino P.,Niehus M.,Melo L.V.,Schwarz R.,Koynov S.,Monteiro T.,Soares J.,Alves H.,Meyer B.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes;Nakamura;Appl. Phys. Lett.,1995

2. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4;Nakamura;Appl. Phys. Lett.,1996

3. Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition;Kwon;Appl. Phys. Lett.,2000

4. Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer;Wang;Appl. Phys. Lett.,2000

5. Evidence of compensating centers as origin of yellow luminescence in GaN;Schubert;Appl. Phys. Lett.,1997

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