n++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts-Reference-Cited by-同舟云学术

n++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts

Published:2017-08 Issue:8 Volume:38 Page:1079-1081
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ferreyra Romualdo A.^ORCID,Suzuki Asamira,Kazumoto Tomohiro,Ueda Daisuke

Funder

Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Next-generation power electronics (funding agency: NEDO)”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7990274/07964732.pdf?arnumber=7964732

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage;Applied Physics Express;2024-09-01

2. Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target;Applied Physics Express;2024-03-01

3. A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

4. AlN/GaN HEMTs with f_max Exceeding 300 GHz by Using Ge-Doped n⁺⁺GaN Ohmic Contacts;ACS Applied Electronic Materials;2023-09-11

5. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13