Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−xGex MOSFETs

Author:

Collaert N.,De Meyer K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Selectively grown vertical Si-pMOS transistor with short channel lengths;Behammer;Electron. Lett.,1996

2. Vertical Si-metal-oxide-semiconductor field effect transistors with channel lengths of 50 nm by molecular beam epitaxy;Gossner;Jpn. J. Appl. Phys.,1994

3. Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths;Aeugle,1997

4. A deep submicron Si1−xGex vertical PMOSFET fabricated by Ge ion implantation;Liu;IEEE Electron. Device Lett.,1998

5. US Provisional Patent Application Number: 60/001,022, July 7th, 1995, C.J.R.P. Augusto, IMEC.

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