Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1375004
Reference7 articles.
1. CMOS scaling into the nanometer regime
2. Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−xGex MOSFETs
3. New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling
4. Nanoscale CMOS
5. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
2. SiGe-Channel HFETs;Silicon Heterostructure Devices;2007-12-13
3. SiGe-Channel HFETs;Silicon Heterostructure Handbook;2005-11
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