SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1309018
Reference6 articles.
1. CMOS scaling into the nanometer regime
2. Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−xGex MOSFETs
3. New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling
4. A deep submicron Si/sub 1-x/Ge/sub x//Si vertical PMOSFET fabricated by Ge ion implantation
5. Vertical MOS transistors with 70 nm channel length
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors;Nano Letters;2008-11-01
2. Drain voltage induced barrier increasing of quantum-wire transistors;Electronics Letters;2004
3. An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor;Solid-State Electronics;2001-02
4. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs;IEEE Transactions on Electron Devices;2001
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