An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor-Reference-Cited by-同舟云学术

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An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

Published:2001-02 Issue:2 Volume:45 Page:281-285
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Xiangdong,Ouyang Qiqing,Jayanarayanan Sankaran Kartik,Prins Freek E.,Banerjee Sanjay

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. CMOS scaling into the nanometer regime;Taur;Proc IEEE,1997

2. Tasch A. The challenges in achieving sub-100 nm MOSFETs. Second Annual IEEE International Conference on Innovative Systems in Silicon. Proceedings, 1997. p. 52–60

3. Nanoscale Ultra-Thin-Body Silicon-on-Insulator PMOSFET with a SiGe/Si Heterostructure Channel;Yeo;IEEE Electron Dev Lett,2000

4. SiGe-channel heterojunction P-MOSFETs;Verdonckt-Vanderbroek;IEEE Trans Electron Dev,1994

5. Short-channel effect improved by lateral channel engineering in deep-submicrometer MOSFETs;Yu;IEEE Trans Electron Dev,1997

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe-Channel HFETs;Silicon Heterostructure Devices;2007-12-13

2. SiGe-Channel HFETs;Silicon Heterostructure Handbook;2005-11

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