Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy-Reference-Cited by-同舟云学术

Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy

Published:1998-07 Issue:7-8 Volume:42 Page:1627-1630
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Watanabe Masahiro,Saitoh Wataru,Aoki Yuichi,Nishiyama Jun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Seabaugh, A. C., Cho, C.-C., Steinhoff, R. M., Moise, T. S., Tang, S., Wallance, R. M., Beam, E. A. and Kao, Y.-C., in Proc. 2nd Int. Workshop on Quantum Functional Devices. Matsue, 1995, p. 32

2. Heteroepitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)

3. Growth of an epitaxial insulator‐metal‐semiconductor structure on Si by molecular beam epitaxy

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