Resistance Switching Memory Characteristics of Si/CaF2/CdF2Quantum-Well Structures Grown on Metal (CoSi2) Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. CdF2/CaF2Resonant Tunneling Diode Fabricated on Si(111)
2. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
3. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
4. Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates
5. Suppression of Leakage Current of CdF2/CaF2Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
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1. The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2;Scientific Herald of Uzhhorod University Series Physics;2023-12-05
2. Design, Fabrication, and Evaluation of Waveguide Structure Using Si/CaF<sub>2</sub> Heterostructure for Near- and Mid- Infrared Silicon Photonics;IEICE Transactions on Electronics;2023-01-01
3. Room temperature near-infrared electroluminescence of Si/CaF2 quantum cascade laser structures grown on an SOI substrate;Japanese Journal of Applied Physics;2021-03-16
4. Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process;Japanese Journal of Applied Physics;2020-04-14
5. Resistance switching memory operation using the bistability in current–voltage characteristics of GaN/AlN resonant tunneling diodes;Japanese Journal of Applied Physics;2016-08-31
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