Resistance switching memory operation using the bistability in current–voltage characteristics of GaN/AlN resonant tunneling diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=10/a=100301/pdf
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3. Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory;physica status solidi (a);2020-12-21
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