Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=4/a=044103/pdf
Reference31 articles.
1. CdF2/CaF2Resonant Tunneling Diode Fabricated on Si(111)
2. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
3. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
4. Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates
5. Suppression of Leakage Current of CdF2/CaF2Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
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