Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DJ05/pdf
Reference28 articles.
1. CdF2/CaF2Resonant Tunneling Diode Fabricated on Si(111)
2. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
3. Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures
4. Resistance Switching Memory Characteristics of Si/CaF2/CdF2Quantum-Well Structures Grown on Metal (CoSi2) Layer
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1. Near-infrared (λ ∼ 1.2 μm) intersubband electroluminescence in Si/CaF2 quantum cascade structures;Japanese Journal of Applied Physics;2023-07-01
2. Design and Analysis of Si/CaF<sub>2</sub> Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics;IEICE Transactions on Electronics;2023-05-01
3. Design, Fabrication, and Evaluation of Waveguide Structure Using Si/CaF<sub>2</sub> Heterostructure for Near- and Mid- Infrared Silicon Photonics;IEICE Transactions on Electronics;2023-01-01
4. Room temperature near-infrared electroluminescence of Si/CaF2 quantum cascade laser structures grown on an SOI substrate;Japanese Journal of Applied Physics;2021-03-16
5. Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process;Japanese Journal of Applied Physics;2020-04-14
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