Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Delay time analysis for short gate-length GaAs MESFETs
2. Investigation of GaAs MESFET equivalent circuits using transient current-continuity equation solutions
3. Distributed modeling of switching transients in GaAs MESFET's
4. Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET's with emphasis on distributed effects
5. Analysis of surface state effect on gate lag phenomena in GaAs MESFET's
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions;IET Circuits, Devices & Systems;2013-01
2. Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs;16th International Workshop on Physics of Semiconductor Devices;2012-10-15
3. A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions;Journal of Applied Physics;2011-03
4. Photocapacitance of GaAs thin-film epitaxial structures;Solid-State Electronics;2005-03
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