A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions-Reference-Cited by-同舟云学术

A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Published:2011-03 Issue:5 Volume:109 Page:053102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tripathi Shweta,Jit S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3549257

Reference36 articles.

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3. Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

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5. Adaptive transversal preamplifier for high speed lightwave systems

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