Investigation of GaAs MESFET equivalent circuits using transient current-continuity equation solutions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. PISCES II and II-B;Pinto,1984
2. Techniques for small-signal analysis of semiconductor devices
3. A process and device model for GaAs MESFET technology: GATES
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1. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal–Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations;Japanese Journal of Applied Physics;2005-09-08
2. Distributive effects on HBT S-parameters;Solid-State Electronics;2000-04
3. Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET;Solid-State Electronics;1998-11
4. A new charge conserving capacitance model for GaAs MESFET's;IEEE Transactions on Electron Devices;1997
5. Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET's with emphasis on distributed effects;IEEE Transactions on Electron Devices;1993
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