Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions-Reference-Cited by-同舟云学术

Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions

Published:2013-01 Issue:1 Volume:7 Page:42-50
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Tripathi Shweta¹,Jit Satyabrata¹

Affiliation:

1. Centre for Research in Microelectronics (CRME)Department of Electronics EngineeringIndian Institute of Technology, (Banaras Hindu University)Varanasi221005India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2012.0145

Reference46 articles.

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4. Optical Control of GaAs MESFET's

5. A new optoelectronic integrated device for light-amplifying optical switch (LAOS)

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