Time decay of stress induced leakage current in thin gate oxides by low-field electron injection-Reference-Cited by-同舟云学术

Time decay of stress induced leakage current in thin gate oxides by low-field electron injection

Published:2001-08 Issue:8 Volume:45 Page:1345-1353
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cester A,Paccagnella A,Ghidini G

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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4. The charging and discharging of high-voltage stress-generated traps in thin silicon oxide;Scott;IEEE Trans Electron Dev,1996

5. Sakakibara K, Ajika N, Hatanaka M, Miyoshi H. A quantitative analysis of stress excess current (SIEC) in SiO2 films. IEEE Proc Int Rel Phys Symp, 1994

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