Conductive atomic force microscopy studies on dielectric breakdown behavior of ultrathin Al2O3 films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3560307
Reference17 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. The band gap of ultrathin amorphous and well-ordered Al2O3 films on CoAl(100) measured by scanning tunneling spectroscopy
3. High temperature oxidation of CoAl(100)
4. Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
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