Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects-Reference-Cited by-同舟云学术

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Published:2019-07-04 Issue:18 Volume:30 Page:1901971
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Jing Xu¹,Illarionov Yury²³,Yalon Eilam⁴,Zhou Peng⁵,Grasser Tibor²,Shi Yuanyuan⁴⁶,Lanza Mario¹^ORCID

Affiliation:

1. Institute of Functional Nano and Soft Materials (FUNSOM)Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

2. Institute for Microelectronics (TU Wien) Gusshausstrasse 27‐29 Vienna 1040 Austria

3. Ioffe Physical‐Technical Institute Polytechnicheskaya 26 St. Petersburg 194021 Russia

4. Andrew and Erna Viterbi Faculty of Electrical EngineeringTechnion–Israel Institute of Technology Haifa 32000 Israel

5. State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Shanghai 200433 China

6. Materials Science and Engineering DepartmentGuangdong Technion–Israel Institute of Technology 241 Daxue Road Shantou 515063 China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Ministry of Finance

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201901971

Reference233 articles.

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3. International Roadmap for Devices and Systems (More Moore) https://irds.ieee.org/images/files/pdf/2017/2017IRDS_MM.pdf(accessed: February2018).

4. A dense gate matrix layout method for MOS VLSI

5. MOS voltage reference based on polysilicon gate work function difference

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