Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures-Reference-Cited by-同舟云学术

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Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures

Published:1997-10 Issue:10 Volume:41 Page:1509-1513
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Paul D.J.,Ryan J.M.,Kelly P.V.,Crean G.M.,Fernández J.M.,Pepper M.,Broers A.N.,Joyce B.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. In-plane transport properties of Si/Si/sub 1-x/Ge/sub x/ structure and its FET performance by computer simulation

2. High hole mobility in SiGe alloys for device applications

3. Room‐temperature electron mobility in strained Si/SiGe heterostructures

4. Anomalous strain relaxation in SiGe thin films and superlattices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology;Semiconductor Science and Technology;2000-03-08

2. Silicon-Germanium Strained Layer Materials in Microelectronics;Advanced Materials;1999-03

3. Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques;Thin Solid Films;1998-12

4. Silicon germanium heterostructures in electronics: the present and the future;Thin Solid Films;1998-05

5. Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

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