Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques-Reference-Cited by-同舟云学术

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Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

Published:1998-12 Issue:1-2 Volume:336 Page:130-136
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Paul D.J,Coonan B,Redmond G,O’Neill B.J,Crean G.M,Holländer B,Mantl S,Zozoulenko I,Berggren K.-F,Lazzari J.-L,Arnaud d’Avitaya F,Derrien J

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Physics and applications of GexSi1-x/Si strained-layer heterostructures

2. High-mobility Si and Ge structures

3. Silicon germanium heterostructures in electronics: the present and the future

4. Recent advances with SiGe heterojunction bipolar transistors

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces;Journal of Physics: Condensed Matter;2011-03-14

2. Resonant tunneling versus thermally activated transport through strainedSi1−xGex∕Si∕Si1−xGexquantum wells;Physical Review B;2007-03-30

3. Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1–xGex/Si type-II quantum wells;Journal of Luminescence;2006-12

4. Field effect on electron-hole recombination in Si/Si1−xGex/Si quantum wells having a W-like type II potential profile;Materials Science and Engineering: C;2006-03

5. Wave function engineering in W designed strained-compensated Si/Si1−xGex/Si type II quantum wells for 1.55μm optical properties;Optical Materials;2005-02

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