DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/23/i=13/a=135002/pdf
Reference34 articles.
1. A Stable High-Index Surface of Silicon: Si(5 5 12)
2. The structure of silicon surfaces from (001) to (111)
3. Directed Self-Assembly of Ge Nanostructures on Very High Index, Highly Anisotropic Si(hkl) Surfaces
4. 1-D nanostructures grown on the Si(5 5 12) surface
5. Growth of Ag rows on Si(5 5 12)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
2. Shape evolution of MBE grown Si1−xGexstructures on high-index Si(5 5 12) surfaces: a temperature dependent study;Journal of Physics D: Applied Physics;2012-10-16
3. Universality in shape evolution of Si 1−x Ge x structures on high-index silicon surfaces;EPL (Europhysics Letters);2012-09-01
4. Shape transformation of Si1−xGexstructures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces;Journal of Physics: Conference Series;2011-11-09
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