Directed Self-Assembly of Ge Nanostructures on Very High Index, Highly Anisotropic Si(hkl) Surfaces-Reference-Cited by-同舟云学术

Directed Self-Assembly of Ge Nanostructures on Very High Index, Highly Anisotropic Si(hkl) Surfaces

Published:2005-01-12 Issue:2 Volume:5 Page:369-372
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ohmori Kenji¹,Foo Y. L.¹,Hong Sukwon¹,Wen J. G.¹,Greene J. E.¹,Petrov I.¹

Affiliation:

1. Frederick-Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl048340w

Reference16 articles.

1. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)

2. Evolution of Ge/Si(100) islands: Island size and temperature dependence

3. Ordering self-assembled islands without substrate patterning

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