Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1–xGex/Si type-II quantum wells-Reference-Cited by-同舟云学术

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Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1–xGex/Si type-II quantum wells

Published:2006-12 Issue:2 Volume:121 Page:421-425
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sfina N.,Lazzari J.-L.,Christol P.,Cuminal Y.,Said M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference20 articles.

1. Silicon-Germanium Strained Layer Materials in Microelectronics

2. Recent advances with SiGe heterojunction bipolar transistors

3. Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

4. Structural characterization of Si1−xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition

5. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si;Materials Science and Engineering: C;2008-07

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