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GaNAs grown by gas source molecular beam epitaxy

Published:1997-02 Issue:2 Volume:41 Page:209-212
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kondow M.,Uomi K.,Niwa A.,Kitatani T.,Watahiki S.,Yazawa Y.,Hosomi K.,Mozume T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

3. Technical Digests 1st Pacific Rim Conf. on Laser and Electro-Optics;Kondow,1995

4. Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2

5. Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

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1. The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells;Journal of Crystal Growth;2009-03

2. Optical properties of amorphous GaAs1−xNx film sputtering with different N2 partial pressures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-09

3. RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMS;Applied Surface Science;2006-07

4. Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells;physica status solidi (c);2005-05

5. InGaAsN on GaAs (111)B for telecommunication laser application;Journal of Crystal Growth;2005-05

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