The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. GaNAs grown by gas source molecular beam epitaxy
2. Electronic Properties of Ga(In)NAs Alloys
3. Recombination processes in N-containing III–V ternary alloys
4. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
5. Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
2. Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55μm with low optical degradation;Journal of Crystal Growth;2011-05
3. Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth;Applied Physics Letters;2009-12-28
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