Recombination processes in N-containing III–V ternary alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
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3. From N isoelectronic impurities to N-induced bands in the GaNAs alloy;Klar;Appl. Phys. Lett.,2000
4. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy;Buyanova;Appl. Phys. Lett.,1999
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