Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs-Reference-Cited by-同舟云学术

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Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs

Published:1997-03 Issue:3 Volume:41 Page:387-390
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Herzel F,Schley P,Heinemann B,Zillmann U,Knoll D,Temmler D,Erben U

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Proc. ESSDERC'95;Aufinger,1995

2. Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies

3. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium;Schumacher,1994

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1. An Intermediate Frequency Amplifier for High-Temperature Applications;IEEE Transactions on Electron Devices;2018-04

2. Comparison of High-frequency Noise Correlation Models in SiGe HBTs;2007 IEEE International Workshop on Radio-Frequency Integration Technology;2007-12

3. Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation;Applied Surface Science;2004-03

4. Numerical simulation of strained Si/SiGe devices: the hierarchical approach;Applied Surface Science;2004-03

5. High-frequency noise in SiGe HBTs;Materials Science in Semiconductor Processing;2003-02

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