High-frequency noise in SiGe HBTs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. RF microelectronics;Razavi,1997
2. Noise modeling of microwave heterojunction transistors;Escotte;IEEE Trans Electron Devices,1995
3. A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design;Voinigescu;IEEE J Solid-State Circuits,1997
4. An HBT noise model valid up to transit frequency;Rudolph;IEEE Electron Device Letters,1999
5. Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications;Niu;IEEE Trans Electron Devices,1999
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1. Noise modeling of advanced technology high speed SiGe HBTs;2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM);2010-10
2. Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters;Semiconductor Science and Technology;2010-09-17
3. Comparison of High-frequency Noise Correlation Models in SiGe HBTs;2007 IEEE International Workshop on Radio-Frequency Integration Technology;2007-12
4. SiGeC HBTs : The TCAD Challenge Reduced to Practice;Materials Science in Semiconductor Processing;2005-02
5. Verification of /spl pi/-equivalent circuit based microwave noise model on A/sub III/B/sub v/ HBTs with emphasis on HICUM;IEEE MTT-S International Microwave Symposium Digest, 2005.;2005
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