Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920736?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Bias dependence of high-frequency noise in heterojunction bipolar transistors;IEEE Transactions on Microwave Theory and Techniques;2003-03
2. Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture;Microelectronics Reliability;2001-02
3. SiGe heterojunction bipolar transistors—The noise perspective;Solid-State Electronics;1997-10
4. Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs;Solid-State Electronics;1997-03
5. Recent advances with SiGe heterojunction bipolar transistors;Thin Solid Films;1997-02
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