Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface-Reference-Cited by-同舟云学术

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Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Published:2005-11 Issue:11-12 Volume:14 Page:2043-2046
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Saito Takeyasu,Park Kyung-ho,Hirama Kazuyuki,Umezawa Hitoshi,Satoh Mitsuya,Kawarada Hiroshi,Okushi Hideyo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Properties of Diamond;Field,1979

2. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

3. Properties of Boron-Doped Epitaxial Diamond Films

4. Bipolar transistor action in ion implanted diamond

5. High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

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1. Time-Dependent Wetting Scenarios of a Water Droplet on Surface-Energy-Controlled Microcavity Structures with Functional Nanocoatings;ACS Applied Materials & Interfaces;2020-08-03

2. Temperature dependence of diamond MOSFET transport properties;Japanese Journal of Applied Physics;2020-03-04

3. Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review;Journal of Materials Chemistry C;2020

4. Reverse‐recovery of diamond p‐i‐n diodes;IET Power Electronics;2018-03-15

5. Dynamic properties of diamond high voltage p–i–n diodes;Japanese Journal of Applied Physics;2017-03-16

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