Reverse‐recovery of diamond p‐i‐n diodes-Reference-Cited by-同舟云学术

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Reverse‐recovery of diamond p‐i‐n diodes

Published:2018-03-15 Issue:4 Volume:11 Page:695-699
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Traoré Aboulaye¹,Nakajima Akira¹,Makino Toshiharu¹²,Kuwabara Daisuke¹³,Kato Hiromitsu¹²,Ogura Masahiko¹²,Takeuchi Daisuke¹²,Yamasaki Satoshi¹²³

Affiliation:

1. Advanced Power Electronics Research CenterNational Institute of Advanced Industrial Science and Technology (AIST)TsukubaIbaraki305‐8568Japan

2. Core Research for Evolutional Science and Technology (CREST)Japan Science and Technology Agency (JST), c/o AISTTsukubaIbaraki305‐8568Japan

3. Graduate School of Pure and Applied SciencesUniversity of TsukubaTsukubaIbaraki305‐8577Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0404

Reference52 articles.

1. Device properties of homoepitaxially grown diamond

2. Hall electron mobility in diamond

3. Hall hole mobility in boron-doped homoepitaxial diamond

4. Extreme dielectric strength in boron doped homoepitaxial diamond;Volpe P.‐N.;Appl. Phys. Lett.,2010

5. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diamond semiconductor and elastic strain engineering;Journal of Semiconductors;2022-02-01

2. Luminescence spectra of diamonds containing nitrogen-vacancy and interstitial photoactive centers;Journal of Luminescence;2021-09

3. Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process;IEEE Electron Device Letters;2020-10

4. Diamond p–i–n Diode with Nitrogen Containing Intrinsic Region for the Study of Nitrogen‐Vacancy Center Electroluminescence;physica status solidi (RRL) – Rapid Research Letters;2020-09-06

5. Hydrogen terminated diamond diode with high breakdown voltage;Sixth Symposium on Novel Optoelectronic Detection Technology and Applications;2020-04-17

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