Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Author:

Liang Jianbo,Nakamura Yuji,Zhan Tianzhuo,Ohno Yutaka,Shimizu Yasuo,Katayama Kazu,Watanabe Takanobu,Yoshida Hideto,Nagai Yasuyoshi,Wang Hongxing,Kasu Makoto,Shigekawa Naoteru

Funder

Hirose International Scholarship Foundation

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference28 articles.

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3. High performance InGaP/GaAs HBTs for mobile communications;Achouche;Electron. Lett.,2000

4. Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20μm;Qu;IEEE Phot. Tech. Lett.,2004

5. K. Pierściński, D. Pierścińska, M. Iwińska, K. Kosiel, A. Szerling, P. Karbownik, and M. Bugajski, Investigation of thermal properties of mid-infrared AlGaAs/GaAs quantum cascade lasers, J. Appl. Phys. 112 (2012) 043112.

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