GaAs PHEMT with 1.6 W/mm output power density
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990474?crawler=true&mimetype=application/pdf
Reference6 articles.
1. An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
2. Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance
3. Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess
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