Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric-Reference-Cited by-同舟云学术

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Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric

Published:2020-11 Issue: Volume:109 Page:108010
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Ding Xiaoyu,Song Liang,He Tao,Sun Chi,Cai Yong,Zeng Chunhong,Zhang Kai,Zhang Xiaodong,Zhang Xinping,Zhang Baoshun

Funder

National Natural Science Foundation of China

Key Industry Technology Innovation Program of Suzhou

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Self-aligned ALD AlOX T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs;Khan;Appl. Phys. Lett.,1993

2. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

3. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor;Zhang;J. Appl. Phys.,1999

4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs;Vetury;IEEE Electron Device Lett.,2001

5. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride;Arulkumaran;Appl. Phys. Lett.,2004

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An insight to current collapse in GaN HEMT and suppressing techniques;Engineering Research Express;2023-01-17

2. High-Photoresponsivity Self-Powered a-, ε-, and β-Ga₂O₃/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD;ACS Applied Materials & Interfaces;2022-07-25

3. Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering;Advanced Materials;2021-10-17

4. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs;IEEE Access;2021

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