Dry etching properties of boron carbon nitride (BCN) films using carbon fluoride gas-Reference-Cited by-同舟云学术

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Dry etching properties of boron carbon nitride (BCN) films using carbon fluoride gas

Published:2008-07 Issue:7-10 Volume:17 Page:1800-1804
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Aoki Hidemitsu,Tokuyama Shinji,Sasada Takashi,Watanabe Daisuke,Mazumder M.K.,Kimura Chiharu,Sugino Takashi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Nano-mechanical properties of BCN/CN/BN multilayer films

2. Boron carbon nitride film with low dielectric constant as passivation film for high speed electronic devices

3. Ag Diffusion in Low-kMaterials (BCN and SiOC) and Its Challenges for Future Interconnection

4. Proc. of New Diamond and Nano Carbons (NDNC);Aoki,2007

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