Ag Diffusion in Low-kMaterials (BCN and SiOC) and Its Challenges for Future Interconnection-Reference-Cited by-同舟云学术

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Ag Diffusion in Low-kMaterials (BCN and SiOC) and Its Challenges for Future Interconnection

Published:2007-04-24 Issue:4B Volume:46 Page:2006-2010
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mazumder Motaharul Kabir,Moriyama Ryota,Watanabe Daisuke,Kimura Chiharu,Aoki Hidemitsu,Sugino Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Electromigration resistance of copper interconnects

2. Copper Transport in Thermal SiO2

3. Kinetics of copper drift in PECVD dielectrics

4. Multilevel interconnections for ULSI and GSI era

5. Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of boron carbon nitride thin films and progress in nanomaterials;Materials Today Advances;2020-12

2. Investigation of the Dielectric and Mechanical Properties for Magnetron Sputtered BCN Thin Films;ECS Journal of Solid State Science and Technology;2014-11-14

3. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects;ECS Journal of Solid State Science and Technology;2014-10-14

4. Hardness Studies of RF Sputtered Deposited BCN Thin Films;ECS Transactions;2014-04-01

5. Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature;Analytical and Bioanalytical Chemistry;2012-06-13

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