Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact-Reference-Cited by-同舟云学术

Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

Published:2001-03 Issue:3 Volume:32 Page:221-226
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Dai J.Y.,Tee S.F.,Tay C.L.,Song Z.G.,Ansari S.,Er E.,Redkar S.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. M. Wall, in: S.G. Howitt (Ed.), Proceedings of 26th Annual Meeting of Microbeam Analysis, 1991, p. 317.

2. What limits the application of TEM in the semiconductor industry?

3. S. Morris, S. Tatti, E. Slack, N. Dickson, H. Mendez, B. Schwiesow, R. Ryle, The 17th International Symposium for Testing and Failure Analysis, Los Angeles, CA, USA, 11–15 November 1991, p. 417.

4. Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam

5. Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

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