DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering
Reference41 articles.
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3. Haifeng Sun, Alt Andreas R, Hansruedi Benedickter, Bolognesi CR, Eric Feltin, Jean-François Carlin, et al. 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz. IEEE Electron Device Lett, doi: http://dx.doi.org/10.1109/LED.2009.2023603.
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