0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess-Reference-Cited by-同舟云学术

0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Published:2016-08 Issue:8 Volume:63 Page:3076-3083
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Dong^ORCID,Chu Kanin,Diaz Jose A.,Ashman Michael D.,Komiak J. J.,Mt. Pleasant Louis M.,Vera Alice,Seekell Philip,Yang Xiaoping,Creamer Carlton,Nichols K. B.,Duh K. H. George,Smith Phillip M.,Chao P. C.,Dong Lin,Ye Peide D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7518696/07518708.pdf?arnumber=7518708

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