An evaluation of (100) sulfur doped inp for use as a first crystal in an X-ray double-crystal diffractometer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy
2. Linewidths in x-ray photoemission and x-ray emission spectroscopies: What do they measure?
3. X‐ray double‐crystal characterization of highly perfect InGaAs/InP grown by vapor‐phase epitaxy
4. InP synthesis and LEC growth of twin-free crystals
5. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films;Applied Physics Letters;1996-01-29
2. Synchrotron section topographic study of defects in InP substrates and quaternary laser structures;Journal of Crystal Growth;1989-08
3. The Growth, Characterization and Electronic Device Applications of GaAs/Si;MRS Proceedings;1989
4. X‐ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices;Journal of Applied Physics;1988-12-15
5. Nondestructive measurement of layer thicknesses in double heterostructures by x‐ray diffraction;Applied Physics Letters;1988-06-06
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