Nondestructive measurement of layer thicknesses in double heterostructures by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99597
Reference8 articles.
1. X‐ray double‐crystal characterization of highly perfect InGaAs/InP grown by vapor‐phase epitaxy
2. An evaluation of (100) sulfur doped inp for use as a first crystal in an X-ray double-crystal diffractometer
3. Dynamical x‐ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix method
4. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy
5. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy
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1. Real-time measurement of rocking curves during MOVPE growth of GaxIn1−xP/GaAs;Applied Surface Science;2003-06
2. Improved Fourier method of thickness determination by x-ray reflectivity;Journal of Applied Physics;2003-02-15
3. X-ray analysis of thin films and multilayers;Reports on Progress in Physics;1996-11-01
4. Growth‐related stress and surface morphology in homoepitaxial SrTiO3 films;Applied Physics Letters;1996-01-22
5. X‐ray standing wave measurements on III–V compound heterostructures;Review of Scientific Instruments;1995-02
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