Synchrotron section topographic study of defects in InP substrates and quaternary laser structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. J. Partanen, T. Tuomi, M.Till, SooKap Hahn and C.-CD. Wong, J. Mater. Res., in press.
2. Use of synchrotron radiation in X-ray diffraction topography
3. An examination of defects in InP single crystals grown by the liquid-encapsulated czochralski technique using synchrotron x-ray topography
4. Impurity effect on the growth of dislocation‐free InP single crystals
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synchrotron X-ray topographic study of dislocations and stacking faults in InAs;Journal of Crystal Growth;2005-10
2. Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation;Journal of Crystal Growth;2000-03
3. Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat‐Treated Czochralski Silicon Crystals;Journal of The Electrochemical Society;1992-02-01
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