Synchrotron X-ray topographic study of dislocations and stacking faults in InAs-Reference-Cited by-同舟云学术

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Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Published:2005-10 Issue:3-4 Volume:283 Page:320-327
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lankinen A.,Tuomi T.,Riikonen J.,Knuuttila L.,Lipsanen H.,Sopanen M.,Danilewsky A.,McNally P.J.,O’Reilly L.,Zhilyaev Y.,Fedorov L.,Sipilä H.,Vaijärvi S.,Simon R.,Lumb D.,Owens A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. O. Madelung (Ed.), Data in Science and Technology, Semiconductors Group IV Elements and III–V Compounds, Springer, Berlin, 1991, pp. 133–141.

2. Synchrotron X-ray topography of electronic materials

3. An examination of defects in InP single crystals grown by the liquid-encapsulated czochralski technique using synchrotron x-ray topography

4. Synchrotron section topographic study of defects in InP substrates and quaternary laser structures

5. Synchrotron topographic study of defects in liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide wafers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3films and their effect on polarization backswitching;Philosophical Magazine;2006-10

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