Low-pressure organometallic epitaxy of the III–V compounds
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference244 articles.
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2. Trimethylaminedichlorogailane (Cl2Ga � NMe3)2 with the Ga-Ga intermetallic bond;Russian Chemical Bulletin;1996-08
3. A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethyl-gallium and tertiary-butyl-arsine;Journal of Crystal Growth;1993-08
4. The Role of Unprecracked Hydride Species Adsorbed on The GaAs(100) in The Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium;MRS Proceedings;1993
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