Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE-Reference-Cited by-同舟云学术

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

Published:1983-03 Issue:2 Volume:12 Page:433-457
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Skromme B. J.,Low T. S.,Roth T. J.,Stillman G. E.,Kennedy J. K.,Abrokwah J. K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651142.pdf

Reference41 articles.

1. J.K. Kennedy, W.D. Potter, and D.E. Davies, J. Cryst. Growth24/25, 233 (1974).

2. J.K. Kennedy and W.D. Potter, J. Cryst. Growth19, 85 (1973).

3. J. Abrokwah, T. Peck, R. Walterson, G.E. Stillman, and T.S. Low, to be published in J. Electron. Mater.

4. L.M. Zinkiewicz, T.J. Roth, B.J. Skromme, and G.E. Stillman, inGallium Arsenide and Related Compounds, Vienna, 1980 (Institute of Physics, Bristol 1981) p. 19.

5. T.J. Roth, B.J. Skromme, T.S. Low, G.E. Stillman, and L.M. Zinkiewicz,Semiconductor Growth Technology, Proc. Soc. Photo-Opt. Instr. Eng.323 (1982) p. 36.

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